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| 2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com * Pb-Free Package is Available** * Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A * Excellent Power Dissipation Due to Thermopad Construction, * Excellent Safe Operating Area * Gain Specified to IC = 1.0 A * Complement to NPN 2N4921, 2N4922, 2N4923 MAXIMUM RATINGS Rating Collector - Emitter Voltage 2N4918 2N4919 2N4920 Collector - Base Voltage 2N4918 2N4919 2N4920 Emitter - Base Voltage Collector Current - Continuous (Note 1) Base Current Total Power Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC (Note 2) IB PD TJ, Tstg VCBO 40 60 80 5.0 1.0 3.0 1.0 30 0.24 -65 to +150 Vdc Adc Adc W W/C C Symbol VCEO 40 60 80 Vdc Value Unit Vdc 3 PD = 30 W @ TC = 25_C 3.0 A, 40-80 V, 30 W GENERAL PURPOSE POWER TRANSISTORS TO-225 CASE 077 STYLE 1 21 MARKING DIAGRAM YWW 2N 49xx xx Y WW = 18, 19, 20 = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The 1.0 A max IC value is based upon JEDEC current gain requirements. The 3.0 A max value is based upon actual current-handling capability of the device (See Figure 5). 2. Indicates JEDEC Registered Data for 2N4918 Series. *Preferred devices are recommended choices for future use and best overall value. THERMAL CHARACTERISTICS (Note 3) Characteristic Thermal Resistance, Junction-to-Case Symbol qJC Max 4.16 Unit C/W 3. Recommend use of thermal compound for lowest thermal resistance. **For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2004 1 July, 2004 - Rev. 11 Publication Order Number: 2N4918/D II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 4. Pulse Test: PW [ 300 ms, Duty Cycle [ 2.0% SMALL-SIGNAL CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ORDERING INFORMATION 2N4920G 2N4920 2N4919 2N4918 Small-Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Current-Gain - Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Base-Emitter On Voltage (Note 4) (IC = 1.0 Adc, VCE = 1.0 Vdc) Base-Emitter Saturation Voltage (Note 4) (IC = 1.0 Adc, IB = 0.1 Adc) Collector-Emitter Saturation Voltage (Note 4) (IC = 1.0 Adc, IB = 0.1 Adc) DC Current Gain (Note 4) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = Rated VCB, IE = 0) Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125_C Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (Note 4) (IC = 0.1 Adc, IB = 0) Device Characteristic 2N4918 - 2N4920* Series http://onsemi.com TO-225 (Pb-Free) Package TO-225 TO-225 TO-225 2N4918 2N4919 2N4920 2N4918 2N4919 2N4920 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICBO ICEO IEBO ICEX Cob hFE hfe fT 500 Unit / Bulk 500 Unit / Bulk 500 Unit / Bulk 500 Unit / Bulk Shipping Min 3.0 25 40 30 10 40 60 80 - - - - - - - - - - - Max - 150 - 100 1.3 1.3 0.6 1.0 0.1 0.1 0.5 0.5 0.5 0.5 - - - - - mAdc mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc pF - - 2 2N4918 - 2N4920* Series 40 PD, POWER DISSIPATION (WATTS) 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (C) 125 150 Figure 1. Power Derating VBE(off) Vin 0 VCC Vin RC RB SCOPE t, TIME ( s) 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 VCC = 30 V APPROX -11 V VCC = 30 V IC/IB = 20 IC/IB = 10, UNLESS NOTED TJ = 25C TJ = 150C t1 Cjd << Ceb t2 Vin APPROX -11 V 0 t1 < 15 ns 100 < t2 < 500 ms t3 < 15 ns t3 TURN-OFF PULSE DUTY CYCLE 2.0% APPROX 9.0 V +4.0 V RB and RC varied to obtain desired current levels tr VCC = 60 V td VCC = 60 V VBE(off) = 2.0 V VCC = 30 V VBE(off) = 0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1000 Figure 2. Switching Time Equivalent Test Circuit Figure 3. Turn-On Time http://onsemi.com 3 2N4918 - 2N4920* Series 1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.01 SINGLE PULSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 P(pk) qJC(t) = r(t) qJC qJC = 4.16C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMIT @ TC = 25C PULSE CURVES APPLY BELOW RATED VCEO 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 TJ = 150C 5.0 ms 1.0 ms 100 ms dc 0.5 0.2 0.1 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active-Region Safe Operating Area 5.0 3.0 2.0 t s, STORAGE TIME ( s) 1.0 0.7 0.5 0.3 0.2 ts = ts - 1/8 tf TJ = 25C TJ = 150C IB1 = IB2 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1000 IC/IB = 10 IC/IB = 20 5.0 3.0 2.0 t f , FALL TIME ( s) 1.0 0.7 0.5 0.3 0.2 IC/IB = 10 IC/IB = 20 TJ = 25C TJ = 150C VCC = 30 V IB1 = IB2 0.1 0.07 0.05 0.1 0.07 0.05 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1000 Figure 6. Storage Time Figure 7. Fall Time http://onsemi.com 4 2N4918 - 2N4920* Series TYPICAL DC CHARACTERISTICS 1000 700 500 hFE, DC CURRENT GAIN 300 200 100 70 50 30 20 10 2.0 3.0 5.0 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) 1000 2000 25C -55 C TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 IC = 0.1 A 0.8 0.25 A 0.5 A 1.0 A VCE = 1.0 V 0.6 TJ = 25C 0.4 0.2 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA) 50 100 200 Figure 8. Current Gain RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) Figure 9. Collector Saturation Region 108 IC = 10 ICES 107 106 105 104 103 ICES VALUES OBTAINED FROM FIGURE 13 0 30 60 90 120 150 VOLTAGE (VOLTS) VCE = 30 V 1.5 1.2 TJ = 25C IC ICES IC = 2x ICES 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 VCE(sat) @ IC/IB = 10 0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 TJ, JUNCTION TEMPERATURE (C) IC, COLLECTOR CURRENT (mA) Figure 10. Effects of Base-Emitter Resistance Figure 11. "On" Voltage 102 TEMPERATURE COEFFICIENTS (mV/ C) IC, COLLECTOR CURRENT ( A) 101 TJ = 150C 100 10-1 100C 10- 2 104 REVERSE 103 -0.2 -0.1 25C FORWARD 0 +0.1 +0.2 IC = ICES VCE = 30 V +2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 2.0 3.0 5.0 qVB FOR VBE 10 20 30 50 100 200 300 500 1000 2000 *qVC FOR VCE(sat) TJ = -55C to +100C *APPLIES FOR IC/IB < hFE @ VCE + 1.0 V 2 TJ = 100C to 150C +0.3 +0.4 +0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 12. Collector Cut-Off Region Figure 13. Temperature Coefficients http://onsemi.com 5 2N4918 - 2N4920* Series PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U Q F M C -A- 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M DIM A B C D F G H J K M Q R S U V STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 2N4918/D |
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